Effect of a Parallel Magnetic Field on the Hole Levels in Semiconductor Superlattices
Chapter
Abstract
We present a calculation of the hole levels in a GaAs-GaA1As superlattice in a magnetic field parallel to the layers, when the magnetic length is greater or comparable with the superlattice period. A comparison with the electronic levels in the same field configuration shows noticeable analogies, but also differences related to the more complex hole subband structure. A calculation of interband magneto-optical transition intensities is also presented.
Keywords
Interband Transition Light Hole Magnetic Field Parallel Orbit Centre Magnetic Length
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© Plenum Press, New York 1989