Microstructure and Electrophysical Properties of YBa2Cu3O7–δ Films

  • S. V. Gaponov
  • M. A. Kalyagin
  • N. A. Kiselev
  • A. L. Vasil’ev
Part of the Growth of Crystals book series (GROC, volume 19)


The quest for very rapid practical utilization of high-temperature superconducting (HTSC) films has driven many research groups thoroughly to study their properties. An important part of this activity is the investigation of the growth mechanism of HTSC layers and the effect of the microstructure on their electro-physical properties. The perfection of the crystalline structure of the grains and the presence of intermediate phases seem to determine the superconducting transition temperature and the width of the critical transition [1]. Furthermore, the size of the critical current depends on the state of the intergrain boundaries, i.e., the presence at them of amorphous interlayers, gaps, etc. and on the twinning structure and the orientation of the film relative to the direction of the transport current flow [2–5, 7]. In many studies, the films are epitaxial and the substrates have an orienting effect. On (001)SrTiO3 substrates, the c axis is usually perpendicular to the substrate although a horizontal placement has also been noted [3, 4, 6, 7]. Film orientations for which the a, b, and c axes are parallel to {100} SrTiO3, i.e., the c axis of YBa2Cu3O7_δ (YBCO) is parallel to the substrate plane and at a 45° angle to it, have been observed [8]. Several efforts involved an investigation of the capabilities of controlling the oriented growth of HTSC films [5, 9, 10]. It has been reported [6, 11] that the growth rate of YBCO films in the c direction is much less than that in the direction of the small constants. Interdiffusion at the film-substrate junction has been studied. The diffusion becomes perceptible for SrTiO3 at T s ∼ 900°C [12]; for Si and A12O3, atT s ≤ 600°C [13].


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    X. D. Wu, A. Inam, T. Venkatesan, et al., “Low-temperature preparation of high-T c superconducting thin films,” Appl. Phys. Lett., 52, No. 9, 754–756 (1988).CrossRefGoogle Scholar
  2. 2.
    D. M. Hwang, T. Venkatesan, C. C. Chang, et al., “Microstructure of in situ epitaxially grown superconducting Y-Ba-Cu-O thin films,” Appl. Phys. Lett., 54, No. 17, 1702–1704 (1989).CrossRefGoogle Scholar
  3. 3.
    C. H. Chen, J. Kwo, and M. Hong, “Microstructures of YBa2Cu3O7 x superconducting thin films grown on a SrTiO3(100) substrate,” Appl. Phys. Lett., 52, No. 10, 841–843 (1988).CrossRefGoogle Scholar
  4. 4.
    A. M. De Santolo, M. L. Mandich, S. Sunshine, et al., “Preparation of high-T c and Jc films of Ba2YCu3O7 using laser evaporation of a composite target containing BaF2,” Appl. Phys. Lett., 52, No. 23, 1995–1997 (1988).CrossRefGoogle Scholar
  5. 5.
    J. Geerk, P. Kus, G. Linker, et al., “Thin film preparation and investigation of high-T c superconductors,” in: Symp. A. “High Temperature Superconductors—Preparation and Applications, ” II Conf., Strasbourg (1988), part A IX. 2.Google Scholar
  6. 6.
    C. C. Chang, X. D. Wu, and T. Venkatesan, “Smooth high-T c YBa2Cu3Ox films by laser deposition at 650 °C,” Appl. Phys. Lett., 53, No. 6, 517–519 (1988).CrossRefGoogle Scholar
  7. 7.
    N. A. Kiselev, A. L. Vasiliev, O. U. Uvarov, et al., “High resolution electron microscopy of superconducting films YBa2Cu3,O7,” Inst. Phys. Conf. Ser. No. 93, Vol. 2, (1988), pp. 223–229.Google Scholar
  8. 8.
    T. Terashima, Y. Bando, K. Iijima, et al., “Epitaxial growth of YBa2Cu3O7-x thin films on (110)SrTiO3 single crystals by activated reactive evaporation,” Appl. Phys. Lett., 53, No. 22, 2232–2234 (1988).CrossRefGoogle Scholar
  9. 9.
    K. Char, M. R. Hahn, T. L. Hylton, et al., “Growth and properties of sputtered high-T c oxide thin films,” IEEE Trans. Magn., 25, No. 2, 2422–2425 (1989).CrossRefGoogle Scholar
  10. 10.
    Y. Terashima, M. Sagoi, K. Kubo, et al., “Effects of oxygen partial pressure and substrate temperature on crystalline orientation in Y-Ba-Cu-O films prepared by sputtering,” Jpn. J. Appl. Phys., 28, No. 4, L653-L655 (1989).Google Scholar
  11. 11.
    S, W. Chan and L. Nazar, “Microstructure of YBa2Cu3O7-x thin films grown on single crystal SrTiO3,” J. Appl. Phys., 65, No. 12, 4719–4722 (1989).CrossRefGoogle Scholar
  12. 12.
    X. D. Wu, D. Dijkkamp, S. B. Ogale, et al., “Epitaxial ordering of oxide superconductor thin films on (100)SrTiO3 prepared by pulsed laser evaporation,” Appl. Phys. Lett., 51, No. 11, 861–863 (1987).CrossRefGoogle Scholar
  13. 13.
    H. Nakajima, S. Yamaguchi, K. Iwasaki, et al., “Interdiffusion and interfacial reaction between an YBa2Cu3Ox thin film and substrates,” Appl Phys. Lett., 53, No. 15, 1437–1439 (1988).CrossRefGoogle Scholar
  14. 14.
    S. V. Gaponov, B. M. Luskin, and N. N. Salashchenko, “Homoepitaxial superlattices with nonoriented barrier layers,” Solid State Commun., 39, No. 2, 301–302 (1981).CrossRefGoogle Scholar
  15. 15.
    H. W. Zandbergen and G. Thomas, “HREM investigations of defects in sintered YBa2Cu3,O7-x,” Phys. Status Solidi A, 107, No. 2, 825–843 (1987).CrossRefGoogle Scholar
  16. 16.
    C. H. Chen, J. Kwo, and M. Hong, “Microstructures of YBa2Cu3O7-x superconducting thin films grown on a SrTiO3(100) substrate,” Appl. Phys. Lett., 52, No. 10, 841–843 (1988).CrossRefGoogle Scholar
  17. 17.
    M. Tomita, T. Hayashi, H. Takaoka, et al., “Cross-sectional TEM observation of Ba2YCu3O7-x film on SrTiO3,” Jpn. J. Appl. Phys., 27, No. 4, L636–L638 (1988).CrossRefGoogle Scholar
  18. 18.
    Y. Matsui, “A superstructure model to interpret the diffuse electron scattering observed in Ba2YCu3Oy,” Jpn. J. Appl. Phys., 26, No. 12, L2021–L2022 (1987).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York  1993

Authors and Affiliations

  • S. V. Gaponov
  • M. A. Kalyagin
  • N. A. Kiselev
  • A. L. Vasil’ev

There are no affiliations available

Personalised recommendations