Abstract
This article explores that a-SiCN:H-based photonic waveguide at terahertz frequency, which is investigated at wavelength of 632 nm using FDTD technique. The dispersion analysis is applied for computing the reflectance of a-SiCN:H waveguide with the help of finite difference time domain technique. The simulation upshot shows that transmitted intensity fluctuates in zigzag manner with respect to the compressive stress from −250 to −50 MPa at frequency 632 nm.
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Sekhar Mishra, C., Palai, G. (2020). Stress Effect on a-SiCN:H Waveguide at Terahertz Frequency for Sensing Application Using FDTD Technique. In: Borah, S., Emilia Balas, V., Polkowski, Z. (eds) Advances in Data Science and Management. Lecture Notes on Data Engineering and Communications Technologies, vol 37. Springer, Singapore. https://doi.org/10.1007/978-981-15-0978-0_52
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DOI: https://doi.org/10.1007/978-981-15-0978-0_52
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Publisher Name: Springer, Singapore
Print ISBN: 978-981-15-0977-3
Online ISBN: 978-981-15-0978-0
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