Abstract
This paper takes the PIN diode as the main object of analysis, theoretically analyzes it’s operating principle and the type of damage occurring under the impact of the high-power microwave, and proposes that the damage characteristics of the device should be based on the time and energy.
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References
Schamiloglu, E.: High power microwave sources: where do we go from here? In: Conference Record of the Twenty-Fifth International IEEE Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. 30 June–3 July (pp. 190–191) (2002)
Doherty, W.E., Joos, R.D.: The PIN diode circuit designer’ handbook. Microsemi Corp
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Chen, K. (2020). The Main Damage Characteristics of Semiconductor Devices Under High-Power Microwave. In: Liang, Q., Liu, X., Na, Z., Wang, W., Mu, J., Zhang, B. (eds) Communications, Signal Processing, and Systems. CSPS 2018. Lecture Notes in Electrical Engineering, vol 517. Springer, Singapore. https://doi.org/10.1007/978-981-13-6508-9_67
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DOI: https://doi.org/10.1007/978-981-13-6508-9_67
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