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Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires

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Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Part of the book series: Springer Theses ((Springer Theses))

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Abstract

In this chapter, a systematic study on the correlation of the electrical properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio and ΦOFF decrease one by one in the sequence of WZ <0001>, ZB <131>, ZB <332>, ZB <121> and ZB <011>. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities and electron concentration at VBG = 0 V than the ZB InAs NWs, these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature dependent measurements. Our work promotes deeper understanding of InAs NWs and is important for the development of nanowire-based devices.

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Authors and Affiliations

  1. Department of Physics, University of Konstanz, Konstanz, Germany

    Mengqi Fu

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  1. Mengqi Fu
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Correspondence to Mengqi Fu .

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Fu, M. (2018). Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires. In: Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-13-3444-3_4

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  • DOI: https://doi.org/10.1007/978-981-13-3444-3_4

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-3443-6

  • Online ISBN: 978-981-13-3444-3

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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