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Design and Modelling of Different Types of SRAMs for Low-Power Applications

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Soft Computing and Signal Processing

Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 898))

Abstract

In this work, different types of SRAMs were designed and characterized these cells in terms of temperature, voltage, static noise margin, leakage power, and total power. These SRAMs were designed and stimulated in Cadence using 45-nm technology.

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References

  1. Gupta, D.C., Raman, A.: Analysis of leakage current reduction techniques in SRAM cell in 90 nm CMOS technology. Int. J. Comput. Appl. 50(19), 0975–8887 (2012)

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Acknowledgements

The authors wish to thank New Horizon College of Engineering for supporting this work.

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Authors and Affiliations

  1. New Horizon College of Engineering, VTU, Bengaluru, India

    V. Vijayalakshmi & B. Mohan Kumar Naik

Authors
  1. V. Vijayalakshmi
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  2. B. Mohan Kumar Naik
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Corresponding author

Correspondence to B. Mohan Kumar Naik .

Editor information

Editors and Affiliations

  1. Department of Computer Science and Software Engineering, Monmouth University, West Long Branch, NJ, USA

    Jiacun Wang

  2. Department of Information Technology, National Institute of Technology Karnataka, Surathkal, Mangaluru, Karnataka, India

    G. Ram Mohana Reddy

  3. Department of Computer Science and Engineering, JNTUH College of Engineering Hyderabad, Hyderabad, Telangana, India

    V. Kamakshi Prasad

  4. Department of Electronics and Communication Engineering, Malla Reddy College of Engineering & Technology, Secunderabad, Telangana, India

    V. Sivakumar Reddy

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© 2019 Springer Nature Singapore Pte Ltd.

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Cite this paper

Vijayalakshmi, V., Mohan Kumar Naik, B. (2019). Design and Modelling of Different Types of SRAMs for Low-Power Applications. In: Wang, J., Reddy, G., Prasad, V., Reddy, V. (eds) Soft Computing and Signal Processing . Advances in Intelligent Systems and Computing, vol 898. Springer, Singapore. https://doi.org/10.1007/978-981-13-3393-4_47

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