Abstract
This paper presents the design of improved MEMS shunt switch for RF communication applications. The switch was designed to provide a better performance in 10–100 GHz range. The switch was optimized in terms of width of the beam and air gap between the fixed type beam and dielectric layer to improve the isolation, insertion, and return loss. This study concludes that materials with high k-dielectrics and high Young’s modulus are desirable for better performance in high-frequency range. The isolation, insertion, and return loss for the designed switch are obtained as –12 dB, –0.05 dB, and –45 dB, respectively.
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Acknowledgements
This research work has been carried out in MEMS laboratory, Department of ECE, Rajiv Gandhi Central University, Itanagar, India.
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Kurmendra, Kumar, R., Pertin, O. (2019). Design of An Improved Micro-Electro-Mechanical-Systems Switch for RF Communication System. In: Khare, A., Tiwary, U., Sethi, I., Singh, N. (eds) Recent Trends in Communication, Computing, and Electronics. Lecture Notes in Electrical Engineering, vol 524. Springer, Singapore. https://doi.org/10.1007/978-981-13-2685-1_1
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DOI: https://doi.org/10.1007/978-981-13-2685-1_1
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