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Raman Imaging of Two Dimensional Materials

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Raman Spectroscopy of Two-Dimensional Materials

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 276))

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Abstract

Raman imaging is a powerful technique that can provide the spatial distribution of the properties of the micro-/nano- material. Different parameters of the Raman peaks, e.g. height/area, position, full width at half maximum (FWHM), and also ratios/differences between peaks, can be used to construct the Raman imaging and provide valuable information for the study of 2D materials and heterostructure. In this chapter, we will introduce the basic principle of Raman imaging, and also its application in the study of 2D materials, including the effects of thickness and stacking configurations, heterostructure and interlayer coupling, defects, strain. We will also show that Raman imaging is an ideal tool to study the growth mechanism of CVD graphene.

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Acknowledgments

This work was supported by the National Key Research and Development Program of China (No. 2017YFA0205700), NSFC (61774034), and the Strategic Priority Research Program of Chinese Academy of Sciences, Grant No. XDB30000000.

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Authors and Affiliations

  1. School of Physics, Southeast University, Nanjing, China

    Xuhong An & Zhenhua Ni

  2. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

    Zexiang Shen

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  1. Xuhong An
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Correspondence to Zhenhua Ni or Zexiang Shen .

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  1. Center of Materials Science and Opto-Electronics Engineering & CAS Center of Excellence in Topological Quantum Computation and University of Chinese Academy of Sciences, State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors and Chinese Academy of Sciences, Beijing, China

    Ping-Heng Tan

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An, X., Ni, Z., Shen, Z. (2019). Raman Imaging of Two Dimensional Materials. In: Tan, PH. (eds) Raman Spectroscopy of Two-Dimensional Materials. Springer Series in Materials Science, vol 276. Springer, Singapore. https://doi.org/10.1007/978-981-13-1828-3_11

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