Abstract
A Solid-State-Disk is made up by a Flash controller plus a bunch of NAND Flash devices. This chapter focuses on design aspects of NAND chips. The information stored in each memory cell is fully analog because it is related to the number of electrons stored in the floating gate. When we program, erase or read, electrons must be injected, extracted and counted, respectively. All these operations require a mix of analog and digital circuits that need to be properly and timely driven. Starting from a generic floorplan of a NAND memory, we guide the reader through the main building blocks. First of all, we describe the logic part of the chip, from the embedded microcontroller , who is in charge of running all the internal algorithms, to the fast DDR interface. Counting the number of electrons in the floating gate is definitely one of the most challenging task, considering that has to be performed with few transistors: sensing techniques are described in Sect. 6.5. Programming and erasing floating gate cells require voltages higher than the chip power supply. Therefore, charge pumps are used to generate all the needed voltages within the chip. In multilevel storage, cell’s gate biasing voltages need to be very accurate and voltage regulators become a must. All these circuits are described in the High Voltage Management section. Last but not least, the row decoder is introduced. This circuit has the task of properly biasing each single wordline in the NAND array, transferring the regulated high voltages to the gate of the memory cell.
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Crippa, L., Micheloni, R. (2018). NAND Flash Design. In: Micheloni, R., Marelli, A., Eshghi, K. (eds) Inside Solid State Drives (SSDs). Springer Series in Advanced Microelectronics, vol 37. Springer, Singapore. https://doi.org/10.1007/978-981-13-0599-3_6
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