Abstract
As shown in Fig. 88.1, a very small MOS (metal–oxide–silicon) structure is formed by contacting the metallic tip of the AFM (Atomic Force Microscopy) to the oxide surface of the silicon sample.
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Nakagiri, N. (2018). Scanning Capacitance Microscopy. In: The Surface Science Society of Japan (eds) Compendium of Surface and Interface Analysis. Springer, Singapore. https://doi.org/10.1007/978-981-10-6156-1_88
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