Abstract
Microwave enhanced chemical vapor deposition (MWCVD) was used to prepare nanodiamond (ND) films with different process parameters containing silicon-vacancy (SiV) centers. The effect of the local environment on the spectral parameters of SiV center’s zero phonon line emission, like peak position and full width at half maximum (FWHM), being important for many applications, have been studied in films having different morphological and structural properties. Relationships between the residual internal stress of the nanodiamond films and the emission parameters of the SiV centers were found and explained by shifting of the electronic levels of ground and excited states of individual SiV centers within the probed SiV ensembles due to the internal stress.
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Acknowledgments
This work was supported by the National Research, Development and Innovation Fund of Hungary with the NVKP_16-1-2016-0043 grant and the VEKOP-2.3.2-16-2016-00011 grant and by the Hungarian Science Foundation under contract number OTKA K-115805 “Complex plasmas in Action”.
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Himics, L., Veres, M., Tóth, S., Rigó, I., Koós, M. (2018). Experimental Study of Spectral Parameters of Silicon-Vacancy Centers in MWCVD Nanodiamond Films Important for Sensing Applications. In: Petkov, P., Tsiulyanu, D., Popov, C., Kulisch, W. (eds) Advanced Nanotechnologies for Detection and Defence against CBRN Agents. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-024-1298-7_20
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DOI: https://doi.org/10.1007/978-94-024-1298-7_20
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