Zusammenfassung
Verschiedene lokale Oxidationstechniken werden hinsichtlich der erreichbaren Planarität analysiert. Anschließend folgen die Integration von Spacer- und LDD-Strukturen zur Reduktion von Kurzkanaleffekten. Die Schaltungsintegration in SOI-Technik einschließlich der Substratherstellung wird vorgestellt. Nanometer-Transistoren und FINFET-Strukturen runden das Kapitel ab.
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© 2019 Springer Fachmedien Wiesbaden GmbH, ein Teil von Springer Nature
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Hilleringmann, U. (2019). Erweiterungen zur Höchstintegration. In: Silizium-Halbleitertechnologie. Springer Vieweg, Wiesbaden. https://doi.org/10.1007/978-3-658-23444-7_11
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DOI: https://doi.org/10.1007/978-3-658-23444-7_11
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