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Fabrication and Optical Characterization of Semiconductor Quantum Wires

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Physics and Technology of Submicron Structures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 83))

Abstract

We have investigated different approaches to effectively one dimensional III-V semiconductor structures (quantum wires) with dimensionality dependent optical properties. The quantum wires are defined by high resolution electron-beam. lithography. By dry etching or selective implantation induced interdiffusion the patterns are transferred into the semiconductor material. The nanometer structures are analyzed by photoluminescence spectroscopy. In etched GaAs/GaAlAs wires we observe a strong decay of the quantum efficiency as the lateral width is reduced. This can be related to the high surface recombination velocity and surface depletion in GaAs. In InGaAs/ InP quantum wires, in contrast, the quantum efficiency is only weakly affected by surface effects. Using implantation induced interdiffusion we have defined buried quantum wire structures in GaAs/Ga.A1As. The photoluminescence spectra show clear lateral quantization effects.

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References

  1. L. Esaki, R. Tsu, IBM Research Note RC-2418 (1969);

    Google Scholar 

  2. G. Weimann, W. Schlapp, in Springer Series in Solid State Physics 53, 88 (1984).

    Article  Google Scholar 

  3. N.T. Linh, Advances in Solid State Physics 23, 227 (1983), Vieweg-Verlag, Braunschweig.

    Article  Google Scholar 

  4. R. Dingle, Advances in Solid State Physics 15 21 (1975), Vieweg-Verlag, Braunschweig.

    Article  Google Scholar 

  5. R. Dingle, W. Wiegmann, C.H. Henry, Phys. Rev. Lett. 13, 827 (1974).

    Article  Google Scholar 

  6. R.C. Miller, D.A. Kleinmann, J. Lum. 30, 520 (1985).

    Article  Google Scholar 

  7. A. Forchel, U. Cebulla, G. Tränkle, H. Kroemer, S. Subbanna, G. Griffiths Surf. Science 174, 143 (1986).

    Google Scholar 

  8. J.C. Maan, G. Belle, A. Fasolino, M. Altarelli, K. Ploog, Phys. Rev. B 30, 2253 (1984).

    Article  Google Scholar 

  9. J. Feldmann, G. Peter, E.O. Göbel, P. Dawson, K. Moore, C. Foxon, R. Elliot, Phys. Rev. Lett. 59, 2337 (1987).

    Article  Google Scholar 

  10. G. Tränkte, H. Leier, A. Forchel, C. Ell, H. Haug, G. Weimann, Phys. Rev. Lett. 58, 419 (1987).

    Article  Google Scholar 

  11. Y. Arakawa, H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).

    Article  Google Scholar 

  12. H. Hassan, H. Spector, J. Vac. Sci. Tech. A 3, 22 (1985).

    Google Scholar 

  13. H. Sakaki, Jap. J. Appl. Phys. 19, L735 (1980).

    Google Scholar 

  14. A.C. Warren, I. Plotnik, E.H. Anderson, M.L. Schattenburg D.A. Antoniadis, H.I. Smith, J. Vac. Sci. Tech. B 4, 365 (1986).

    Article  Google Scholar 

  15. S. Namba, Microelectronic Eng. §., 315 (1987).

    Google Scholar 

  16. F. Emoto, K. Gamo, S. Namba, N. Samoto, R. Shimizu, Jap. J. Appl. Phys. 24, L809 (1985).

    Article  Google Scholar 

  17. A.R. Reinberg, in “VLSI Electronics - Microstructure Science”, Vol. 2 Academic Press, New York, 1981.

    Google Scholar 

  18. B.E. Maile, A. Forchel, R. Germann, A. Menschig, K. Streubel, F. Scholz, G. Weimann, W. Schlapp, Microcircuit Eng. 6, 163 (1987).

    Article  Google Scholar 

  19. A. Forchel, H. Leier, B.E. Malle, R. Germann, Advances in Solid State Physics, Vieweg Verlag, 1988, in press.

    Google Scholar 

  20. M. Korn, A. Forchel, M. Möhrle, R. Germann, K. Streubel, F. Scholz, Microcircuit Eng. 6.551 (1987).

    Article  Google Scholar 

  21. R.E. Howard, L.D. Jackel, W.J. Skocpol, Microelectronic Eng. 3, 3 (1985).

    Article  Google Scholar 

  22. B.E. Malle, A. Forchel, A. Menschig, R. Germann, H. Meier, to be published.

    Google Scholar 

  23. H.C. Casey, E. Buehler, Appl. Phys. Lett. 30 247 (1977).

    Article  Google Scholar 

  24. The value of the surface recombination velocity in InGaAs can be estimated from ref. 23 in conjunction with ref. 25.

    Google Scholar 

  25. H. Temkin, G.J. Dolan, M.B. Panish, S.N.G. Chu, Appl. Phys. Lett. 50, 413 (1987).

    Article  Google Scholar 

  26. P.M. Petroff, A.C. Gossard, R.A. Logan, W. Wiegmann, Appl Phys. Lett. 41 635 (1982)

    Article  Google Scholar 

  27. R.E. Behringer, P.M. Mankiewich, R.E. Howard, J. Vac. Sci. Technol. B 5 326 (1987).

    Article  Google Scholar 

  28. W. Hansen, M. Horst, J.P. Kotthaus, U. Merkt, Ch. Sikorski, Phys. Rev. Lett. 58 2586 (1987).

    Article  Google Scholar 

  29. W.D. Laidig, N. Holonyak, M.D. Camras, K. Hess, J.J. Coleman, P.D. Dapkus, J. Bardeen, Appl. Phys. Lett. 38, 776 (1981)

    Article  Google Scholar 

  30. J.J. Coleman, P.D. Dapkus, C.G. Kirkpatrick, M.D. Camras, N. Holonyak, Appl. Phys. Lett. 40, 904 (1982).

    Article  Google Scholar 

  31. H. Leier, H. Rothfritz, A. Forchel, G. Weimann, to be published.

    Google Scholar 

  32. M. Komuro, H. Hiroshima, H. Tanoue, T. Kanayama, J. Vac. Sci. Technol. B 4, 985 (1983).

    Article  Google Scholar 

  33. J. Cibert, P.M. Petroff, G.J. Dolan, S.J. Pearton, A.C. Gossard, J.H. English, Appl. Phys. Lett. 49, 1275 (1988).

    Article  Google Scholar 

  34. Y. Hirayama, S. Tarucha, Y. Suzuki, H. Okamoto, Phys. Rev. B 37 2774 (1988).

    Article  Google Scholar 

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Authors and Affiliations

  1. 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000, Stuttgart 80, Fed.Rep.of Germany

    A. Forchel, B. E. Maile, H. Leier & R. Germann

Authors
  1. A. Forchel
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  2. B. E. Maile
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  3. H. Leier
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  4. R. Germann
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Editor information

Editors and Affiliations

  1. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

  2. Institut für Physik, Montanuniversität Leoben, A-8700, Leoben, Austria

    Günther Bauer

  3. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

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© 1988 Springer-Verlag Berlin Heidelberg

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Forchel, A., Maile, B.E., Leier, H., Germann, R. (1988). Fabrication and Optical Characterization of Semiconductor Quantum Wires. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_3

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  • DOI: https://doi.org/10.1007/978-3-642-83431-8_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83433-2

  • Online ISBN: 978-3-642-83431-8

  • eBook Packages: Springer Book Archive

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