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On the Light Extraction Efficiency for III-Nitride-Based Light-Emitting Diodes

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Light-Emitting Diodes

Part of the book series: Solid State Lighting Technology and Application Series ((SSLTA,volume 4))

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Abstract

Considering the large contrast of the refractive index between the air and the III-nitride semiconductor layer, the external quantum efficiency for III-nitride-based light-emitting diodes is strongly influenced by the light extraction efficiency. This chapter reviews the current status for the technologies that have been adopted thus far to improve the light extraction for III-nitride-based light-emitting diodes. Meanwhile, in-depth physical interpretations are also presented and discussed.

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Acknowledgments

This work is supported by the National Natural Science Foundation of China (Nos. 61604051, 51502074), Natural Science Foundation of Tianjin City (No. 16JCQNJC01000), and Natural Science Foundation of Hebei Province (No. F2017202026).

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Authors and Affiliations

  1. Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin, P. R. China

    Zi-Hui Zhang, Yonghui Zhang & Wengang Bi

  2. Department of Photonics and Institute of Electro-optical Engineering, National Chiao Tung University, Hsinchu, Taiwan

    Sung-Wen Huang Chen & Hao-Chung Kuo

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  1. Zi-Hui Zhang
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  2. Yonghui Zhang
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Correspondence to Hao-Chung Kuo .

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  1. Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Solid State Lighting R&D Center, Beijing, China

    Jinmin Li

  2. Delft University of Technology, DELFT, Noord-Brabant, The Netherlands

    G. Q. Zhang

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Zhang, ZH., Zhang, Y., Huang Chen, SW., Bi, W., Kuo, HC. (2019). On the Light Extraction Efficiency for III-Nitride-Based Light-Emitting Diodes. In: Li, J., Zhang, G.Q. (eds) Light-Emitting Diodes. Solid State Lighting Technology and Application Series, vol 4. Springer, Cham. https://doi.org/10.1007/978-3-319-99211-2_9

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