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Light-Emitting Diodes pp 1–39Cite as

GaN Substrate Material for III–V Semiconductor Epitaxy Growth

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Part of the book series: Solid State Lighting Technology and Application Series ((SSLTA,volume 4))

Abstract

The rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics accelerates the research, development, and commercial production of GaN substrate materials. GaN substrate with low defect density will be conducive to improve the performance and lifetime of the devices, leading to significant progress in the development of several optoelectronic and high-power devices. In this paper, various fabrication techniques and their corresponding development, considered with high potential to deliver high-quality and/or cost-effective and scalable GaN crystals, are reviewed, including liquid-phase methods and gas-phase methods. Among these growth methods, hydride vapor-phase epitaxy (HVPE) is well known as the major substrate technology with high growth rate, high crystal quality, and low cost, which attracts more attention. So, we have a special discussion on the detailed technological aspects of HVPE for the production of GaN substrate materials.

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Authors and Affiliations

  1. School of Electronic Science and Engineering, Nanjing University, Nanjing, China

    Rong Zhang & Xiangqian Xiu

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  1. Rong Zhang
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  2. Xiangqian Xiu
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Correspondence to Rong Zhang .

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Editors and Affiliations

  1. Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Solid State Lighting R&D Center, Beijing, China

    Jinmin Li

  2. Delft University of Technology, DELFT, Noord-Brabant, The Netherlands

    G. Q. Zhang

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Zhang, R., Xiu, X. (2019). GaN Substrate Material for III–V Semiconductor Epitaxy Growth. In: Li, J., Zhang, G.Q. (eds) Light-Emitting Diodes. Solid State Lighting Technology and Application Series, vol 4. Springer, Cham. https://doi.org/10.1007/978-3-319-99211-2_1

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  • DOI: https://doi.org/10.1007/978-3-319-99211-2_1

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