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International Workshop on the Physics of Semiconductor and Devices

IWPSD 2017: The Physics of Semiconductor Devices pp 571–576Cite as

Floating Gate Junction-Less Double Gate Radiation Sensitive Field Effect Transistor (RADFET) Dosimeter: A Simulation Study

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

Abstract

In this paper, a floating gate Junction-less Double Gate radiation sensitive field effect transistor has been investigated in order to observe the impact of gamma radiation without applying any gate bias in pre-radiation state. Gamma radiation model of Sentaurus 3D device simulator has been used to simulate the trapping de-trapping of the electron-hole pair due the gamma radiation. The change in the electrical characteristics due to the floating gate geometry has been explained in the paper.

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References

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Acknowledgements

Authors would like to thank University of Delhi and University Grant Commission (Sanction letter No.43-287/2014(SR)) for providing necessary fund during course of this work.

Author information

Authors and Affiliations

  1. Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi, 110021, India

    Avashesh Dubey & Mridula Gupta

  2. Department of Electronics, Sri Venkateswara College, University of Delhi, New Delhi, 110021, India

    Rakhi Narang

  3. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, 110078, India

    Manoj Saxena

Authors
  1. Avashesh Dubey
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  2. Rakhi Narang
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  3. Manoj Saxena
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  4. Mridula Gupta
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Corresponding author

Correspondence to Mridula Gupta .

Editor information

Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Dubey, A., Narang, R., Saxena, M., Gupta, M. (2019). Floating Gate Junction-Less Double Gate Radiation Sensitive Field Effect Transistor (RADFET) Dosimeter: A Simulation Study. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_89

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