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Extraction of Recombination Rate Constants Using Illumination Dependent \( \varvec{V}_{{{\mathbf{oc}}}} \) of Perovskite Solar Cells

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The Physics of Semiconductor Devices (IWPSD 2017)

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Abstract

In this work, we introduce a scheme to extract rate coefficients by comparing open circuit voltages obtained from detailed balance calculations and numerical simulations of PIN based Perovskite solar cell at different illumination intensity. We find that the extracted values of rate coefficients are in accordance with the assumed input parameters. Our methodology can also be applicable to other thin film carrier selective PIN devices.

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References

  1. National Renewable Energy Laboratory, Best Research-Cell Efficiencies Chart, https://www.nrel.gov/ncpv/images/efficiency_chart.jpg

  2. R.L. Milot, G.E. Eperon, H.J. Snaith, M.B. Johnston, L.M. Herz, Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films. Adv. Func. Mater. 25, 6218–6227 (2015)

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Acknowledgements

This article is based upon work supported under the US-India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute for India and the United States (SERIIUS), funded jointly by the U.S. Department of Energy (Office of Science, Office of Basic Energy Sciences, and Energy Efficiency and Renewable Energy, Solar Energy Technology Program, under Subcontract DE-AC36-08GO28308 to the National Renewable Energy Laboratory, Golden, Colorado) and the Government of India, through the Department of Science and Technology under Subcontract IUSSTF/JCERDC-SERIIUS/2012 dated 22nd November 2012. The authors also acknowledges Center of Excellence in Nanoelectronics (CEN) and National Center for Photovoltaic Research and Education (NCPRE), IIT Bombay for computational facilities.

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Correspondence to Vikas Nandal .

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Nandal, V., Nair, P.R. (2019). Extraction of Recombination Rate Constants Using Illumination Dependent \( \varvec{V}_{{{\mathbf{oc}}}} \) of Perovskite Solar Cells. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_67

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