Abstract
Organic materials as carrier selective layers are increasingly explored towards low temperature solution processed Silicon based heterojunction solar cells. In this regard, PEDOT:PSS (poly (3,4-ethylenedioxythiophene) polystyrene sulfonate) acts as a carrier selective layer for holes, by forming a barrier for the electrons. Accordingly, here we investigate the passivation quality of PEDOT:PSS over n-type c-Si wafer and report the initial results on such heterojunction solar cells. The fabricated Ag/PEDOT:PSS/n-c-Si/n+/Al hybrid solar cell structure yielded an efficiency of 8.79%, thus indicating the viability of PEDOT:PSS as a carrier selective hole extraction layer for Si based heterojunction solar cells.
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Acknowledgements
We would like to thank MNRE, Government of India for the financial support through the project AMANSI under the National Solar Science fellowship. Anil Kumar would like to thank UGC for providing Junior Research fellowship. We would also like to thank NCPRE and CEN at Indian Institute of Technology Bombay for the facilities provided.
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Kumar, A., Markose, K.K., Khorakiwala, I.M., Singha, B., Nair, P.R., Antony, A. (2019). Studies on the PEDOT:PSS/n-Si Hybrid Heterojunction Diode. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_65
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DOI: https://doi.org/10.1007/978-3-319-97604-4_65
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