Abstract
In this work, design and implementation of SSPL GaN HEMT based power amplifier in L band (1.7–2.1 GHz) with 10 W linear output power has been presented. The design is based on the load pull and small signal S-parameters measurement data. Extensive load pull measurement and Co-EM simulation have been carried out for designing this circuit. The designed amplifier consists of four stages with overall small signal gain of 45 dB and delivers 40 dBm output power at an input power of −5 dBm. The carrier to 3rd intermodulation ratio is better than 30 dB for a two tone input signal having 10 MHz spacing and of −5 dBm of total power.
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The authors gratefully acknowledge their discussions with Dr. R. K. Sharma, Director SSPL and Dr. Ashok Kalra, DEAL Dehradun. This work was performed at SSPL, Delhi and GAETEC, Hyderabad. We are thankful to SSPL MMIC Fabrication Team and Mr. Anant Naik, CEO GAETEC and his team for supporting us in this work.
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© 2019 Springer Nature Switzerland AG
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Jindal, A. et al. (2019). 1.7–2.1 GHz GaN Linear Power Amplifier. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_36
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DOI: https://doi.org/10.1007/978-3-319-97604-4_36
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