Abstract
We have done a simulation study on the quantum capacitance and sheet carrier density of graphene MOSFETs following a quasianalytical model for graphene MOSFET with gapless large area graphene channel (Thiele et al. in JAP 107:094505, 2010 [1]). First, the simulation model has been validated by properly reproducing the values of quantum capacitance for a graphene MOSFET without back-gate and zero applied drain-source voltage. Next, we have investigated the effect of both top-gate and back-gate voltages on the quantum capacitance and sheet carrier density and the results are presented here.
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References
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Acknowledgements
Sriyanka Behera wishes to thank the Department of Science and Technology, Government of India for the INSPIRE fellowship to carry out this work.
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Pattanaik, S.R., Behera, S., Dash, G.N. (2019). Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_3
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DOI: https://doi.org/10.1007/978-3-319-97604-4_3
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