Abstract
Aluminum Gallium Nitride (AlGaN) barrier thickness dependent trapping characteristic of AlGaN/GaN heterostructure is investigated by frequency dependent conductance measurement. The conductance measurement in depletion region biases (−4.8 to −3.2 V) shows that the \( {\text{Al}}_{0.3} {\text{Ga}}_{0.7} {\text{N}}\left( {18\;{\text{nm}}} \right)/{\text{GaN}} \) structure suffers from both the surface (metal/AlGaN interface of gate region) and interface (AlGaN/GaN interface of channel region) trapping states, whereas the \( {\text{Al}}_{0.3} {\text{Ga}}_{0.7} {\text{N}} \left( { 25\;{\text{nm}}} \right)/{\text{GaN}} \) structure with thicker AlGaN barrier (25 nm) layer suffers from only interface trap energy states in the depletion bias region (−6.0 to −4.2 V). The calculated surface trap time constants (~2 μs) are found to be very less in \( {\text{Al}}_{0.3} {\text{Ga}}_{0.7} {\text{N}}\left( {18\;{\text{nm}}} \right)/{\text{GaN}} \) structure. This lower time constant is correlated to the electric field induced tunneling process for de-trapping of surface trap states.
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Authors gratefully acknowledge project titled “ENS” sponsored by Dept. of Electronics and Information Technology (DeitY), Govt of India for providing fabrication and characterization facility.
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Chakraborty, A., Ghosh, S., Das, S., Bag, A., Biswas, D. (2019). Effect of AlGaN Barrier Thickness on Trapping Characteristics in AlGaN/GaN Heterostructures. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_28
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DOI: https://doi.org/10.1007/978-3-319-97604-4_28
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