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60Coγ Irradiation Effects on I–V Characteristics of AlGaN/GaN Schottky Diodes

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The Physics of Semiconductor Devices (IWPSD 2017)

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

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Abstract

AlGaN/GaN Schottky diodes of variable area have been exposed to gamma radiation. These diodes have been irradiated up to a cumulative dose of 104 Gy. The effect of gamma irradiation on the current–voltage (I–V) characteristics of the diodes before and after gamma exposure has been investigated. The I–V characteristics show a shift in the turn-on voltage and improvement in the reverse Schottky current after the irradiation. Parameters like Schottky barrier height and ideality factor has also been calculated from the diode characteristics.

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References

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Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, New Delhi, 110054, Delhi, India

    Chandan Sharma, Robert Laishram,  Amit, D. S. Rawal & Seema Vinayak

  2. Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, Delhi, India

    Chandan Sharma & Rajendra Singh

Authors
  1. Chandan Sharma
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  2. Robert Laishram
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  3. Amit
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  4. D. S. Rawal
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  5. Seema Vinayak
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  6. Rajendra Singh
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Corresponding author

Correspondence to Chandan Sharma .

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Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Sharma, C., Laishram, R., Amit, Rawal, D.S., Vinayak, S., Singh, R. (2019). 60Coγ Irradiation Effects on I–V Characteristics of AlGaN/GaN Schottky Diodes. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_27

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