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Understanding the Optical, Electrical and Photoelectrochemical Properties of PbTiO3 Thin Films

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The Physics of Semiconductor Devices (IWPSD 2017)

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

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Abstract

PbTiO3 thin films were synthesized using spin coating sol gel method and sintered at three different temperatures. All the thin films sample were analysed using XRD, scanning electron microscopy, Raman spectroscopy, UV-Vis spectroscopy analysis which shows that PbTiO3 films were having cubic crystal structure with band gap value of 3.0 eV respectively. The photoelectrochemical response was also observed in three electrode PEC cell. Photoanodic behaviour for PbTiO3 films with highest photocurrent density of 1.2 mAcm−2 at 0.8 V/Ag/AgCl for sample sintered at 650 °C was observed.

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Acknowledgements

Author (Dipika Sharma) thankfully accept the economic funding received from SERB-DST, New Delhi, India through National Post Doc fellowship.

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Authors and Affiliations

  1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology, New Delhi, India

    Dipika Sharma, Nisha Kodan & B. R. Mehta

  2. Department of Electronics, Acharya Narendra Dev College, Delhi University, New Delhi, India

    Rishibrind Kumar Upadhyay

Authors
  1. Dipika Sharma
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  2. Rishibrind Kumar Upadhyay
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  3. Nisha Kodan
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  4. B. R. Mehta
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Corresponding author

Correspondence to Dipika Sharma .

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Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Sharma, D., Upadhyay, R.K., Kodan, N., Mehta, B.R. (2019). Understanding the Optical, Electrical and Photoelectrochemical Properties of PbTiO3 Thin Films. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_190

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