Abstract
The paper represent the modeling of CdTe deposited thin film by thermal evaporation by computing the film thickness, mass transfer rate and heat flux using time dependent model with Backward Differentiation Formula (BDF) solver. CdTe film deposited by resistively heated evaporator source at a temperature of 723 K by vacuum evaporation method. The film thickness varies between 205 and 235 Å across the sample. So maximum variation observed in simulation is 14%. The total incident molecular flux is more than 1.8 × 1017 (1/m2 s) which depends upon the source evaporation temperature corresponding to vapor pressure. The mass transfer rate is 1.906 × 10−8 kg/s and total outward heat flux from source 1.71855 W s.
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Gaur, S.K., Saini, A.K., Meena, V.S., Sharma, B.L. (2019). Modeling & Simulation of Thermal Evaporated CdTe Thin Film. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_189
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DOI: https://doi.org/10.1007/978-3-319-97604-4_189
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