Abstract
n-ZnO nanorod/p-si hetrojunction diode is synthesized using a simple chemical solution method on p-type silicon substrates for light emitting diode applications. The grown ZnO nanorods showed highly textured hexagonal crystallographic phase along c-axis. An intense band to band photoluminescence peak is observed at 377 nm in conjunction with the weak deep-level emissions in visible region centred at 500 nm. The current–voltage measurements show diode-like characteristics. The work will also discuss the emission response with bias field for these solution processed n-ZnO/p-Si heterostructures under dark and UV conditions in the context of possible UV photo-response and light emitting diode applications.
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Kumari, C., Dixit, A. (2019). Light Emitting Diode and UV Photodetector Characteristics of Solution Processed n-ZnO Nanorods/p-Si Heterostructures. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_186
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DOI: https://doi.org/10.1007/978-3-319-97604-4_186
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