Abstract
High staggered, Moderate staggered and homo junction III–V semiconductor-based heterojunction TFETs are of interest as they allow a high on–off current ratio and high on current through reduction in the tunneling barrier height. GaAsSb/InGaAs based heterojunction p-n-i-n TFET has shown an increase in the drive current when compared to homojunction due to band engineering. Further engineering can be performed by varying tunneling barrier height (Ebeff) from 0.5 to 0.25 eV using differently staggered heterojunction. Thus, the concept of halo doped heterojunction pocket TFET is presented by analytical and simulation study with varying staggered junctions.
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Acknowledgements
Authors would like to thank Council of Scientific & Industrial Research (CSIR), India (File No. 22(0724)/17/EMR-II).
M. L. Varshika (ENGS3150) would like to thank the Indian Academy of Sciences for providing the opportunity to be a part of SRFP-2017.
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Varshika, M.L., Narang, R., Gupta, M., Saxena, M. (2019). Analytical Modeling and Simulation Study of Homo and Hetero III-V Semiconductor Based Tunnel Field Effect Transistor (TFET). In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_181
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DOI: https://doi.org/10.1007/978-3-319-97604-4_181
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