Abstract
High staggered, Moderate staggered and homo junction III–V semiconductor-based heterojunction TFETs are of interest as they allow a high on–off current ratio and high on current through reduction in the tunneling barrier height. GaAsSb/InGaAs based heterojunction p-n-i-n TFET has shown an increase in the drive current when compared to homojunction due to band engineering. Further engineering can be performed by varying tunneling barrier height (Ebeff) from 0.5 to 0.25 eV using differently staggered heterojunction. Thus, the concept of halo doped heterojunction pocket TFET is presented by analytical and simulation study with varying staggered junctions.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
U.E. Avci, D.H. Morris, I.A. Young, Tunnel field-effect transistors: prospects and challenges. IEEE J. Electron Devices Soc. 3(3), 88–95 (2015)
D. Mohata, B. Rajamohanan, T. Mayer, M. Hudait, J. Fastenau, D. Lubyshev, A.W. Liu, S. Datta, Barrier-engineered arsenide–antimonide heterojunction tunnel FETs with enhanced drive current. IEEE Electron Device Lett. 33(11), 1568–1570 (2012)
Y.C. Wu, J.H. Tsai, T.K. Chiang, C.C. Chiang, F.M. Wang, Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped–channel field–effect transistors. Semiconductors 49(2) (2015)
Sentaurus Users Manual (Synopsis, Inc., 2012)
A. Biswas, S.S. Dan, C. LeRoyer, W. Grabinski, A.M. Ionescu, TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model. Microelectron. Eng. 98, 334–337 (2012)
C. Kampen, A. Burenkov, J. Lorenz, Challenges in TCAD simulations of tunneling field effect transistors, in Proceedings of Solid-State Device Research Conference (ESSDERC), pp. 139–142 (2011)
Y. Taur, J. Wu, J. Min, An analytic model for heterojunction tunnel FETs with exponential barrier. IEEE Trans. Electron Devices 62(5), 1399–1404 (2015)
B. Syamal, C. Bose, C.K. Sarkar, N. Mohankumar, Effect of single halo doped channel in tunnel FETs: a 2-D modeling study, in Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), pp. 1–4 (2010)
D.K. Mohata, R. Bijesh, Y. Zhu, M.K. Hudait, R. Southwick, Z. Chbili, D. Gundlach, J. Suehle, J.M. Fastenau, D. Loubychev, A.K. Liu, Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio, in VLSI Technology (VLSIT), pp. 53–54 (2012)
D. Mohata, S. Mookerjea, A. Agrawal, Y. Li, T. Mayer, V. Narayanan, A. Liu, D. Loubychev, J. Fastenau, S. Datta, Experimental staggered-source and N+ pocket-doped channel III–V tunnel field-effect transistors and their scalabilities. Appl. Phys. Express 4(2) (2011)
D.K. Mohata, Arsenide-antimonide hetero-junction tunnel transistors for low power logic applications. Ph.D. Dissertation, The Pennsylvania State University (2013)
R. Narang, M. Saxena, R.S. Gupta, M. Gupta, Dielectric modulated tunnel field-effect transistor—a biomolecule sensor. IEEE Electron Device Lett. 33(2), 266–268 (2012)
T.Y. Yu, L.S. Peng, C.W. Lin, Y.M. Hsin, GaAsSb/InGaAs tunnel field effect transistor with a pocket layer. Microelectr. Reliab. (2017)
Acknowledgements
Authors would like to thank Council of Scientific & Industrial Research (CSIR), India (File No. 22(0724)/17/EMR-II).
M. L. Varshika (ENGS3150) would like to thank the Indian Academy of Sciences for providing the opportunity to be a part of SRFP-2017.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Switzerland AG
About this paper
Cite this paper
Varshika, M.L., Narang, R., Gupta, M., Saxena, M. (2019). Analytical Modeling and Simulation Study of Homo and Hetero III-V Semiconductor Based Tunnel Field Effect Transistor (TFET). In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_181
Download citation
DOI: https://doi.org/10.1007/978-3-319-97604-4_181
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-97603-7
Online ISBN: 978-3-319-97604-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)