Abstract
This work explores the fabrication of n-ZnO:Sr(3%)/p-Si heterojunction by low cost spray pyrolysis method and its characterization by XRD, spectroscopic ellipsometer and AFM to understand structural and surface morphological features. The temperature dependent hetero junction properties were investigated by Current–Voltage–Temperature (I–V–T) measurements. The forward and reverse bias characteristics were studied in the temperature range of −30 to +30 °C. Low turn on voltage was noticed in these devices. The resultant turn-on voltage varies inversely with temperature and reverse saturation current significantly decreases at lower temperatures.
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This work was supported by University Grants Commission (UGC), New Delhi under SAP CAS-I and CAS-II.
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Raghavendra, P.V., Bhat, J.S. (2019). Electrical Characteristics of Spray Deposited n-ZnO:Sr/p-Si Heterojunction. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_171
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