Abstract
Surface preparation of HgCdTe epilayers was carried out using chemo-mechanical polishing on pellon pad and nylon cloth pad and their results were compared using X-ray topographs, which were recorded for the (440) and (620) planes. The good cross-hatch lines were observed in case of Nylon pad polishing. On the other hand, the surface structure is mosaic in case of pellon pad polishing. Surface quality was also compared by defect etching and elongated feature were reveled with the use of pellon pad, while these feature were not in case of the polishing on nylon pad. AFM results were also compared as a function of polishing procedure. Root mean square Roughness was measured after chemo-mechanical polished using Atomic force microscopy, which was 1.37 and 0.74 nm at pellon and nylon pad respectively.
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Acknowledgements
The authors are grateful to Dr. Ashok Kapoor, Mr. Sandeep Dalal and Ms. Garima Gupta for using the characterization tools.
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Nokhwal, R. et al. (2019). Chemo-mechanical Polishing of HgCdTe Epilayers Grown Using LPE Technique. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_156
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DOI: https://doi.org/10.1007/978-3-319-97604-4_156
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