Abstract
Single-mode silicon p-i-n waveguides with varying cross-sections have been studied experimentally for on-chip photodetection at an operating wavelength λ ~ 1550 nm. It has been shown that the quantum efficiency increases with decreasing waveguide cross-section. The performance of such a photodetector can be modelled in terms of density of surface states, bulk two photon absorption co-efficient, and waveguide loss parameters.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
M.W. Geis et al., CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band. IEEE Photonics Technol. Lett. 19(3), 152–154 (2007)
Y. Li et al., Characterization of surface-state absorption in foundry-fabricated silicon ridge waveguides at 1550 nm using photocurrents, in Conference on Lasers and Electro-Optics. Optical Society of America (2016), p. SM2G.4
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Switzerland AG
About this paper
Cite this paper
Kurudi, S., Nandi, R., Das, B.K. (2019). Scaling of Silicon PIN Waveguide Photodetector at 1550 nm Wavelength. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_150
Download citation
DOI: https://doi.org/10.1007/978-3-319-97604-4_150
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-97603-7
Online ISBN: 978-3-319-97604-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)