Abstract
High power laser diodes are fabricated using two different etchants by wet etching method. Sidewall roughness of the stripe in two cases is extracted using AFM and scattering loss due to this roughness is calculated theoretically by using well established model and exponential autocorrelation function for the roughness.
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References
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Acknowledgements
Authors are grateful to Director SSPL, Dr. R. K. Sharma for continuous support and permission to publish this work. The authors also thank Characterization Group at SSPL for SEM and AFM. Special thanks to Akhilesh Pandey for valuable inputs on roughness extraction by AFM. We also thank our High Power Laser Diode Team at SSPL for fabrication of laser diodes used in the study and for helpful discussions.
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Jain, D., Mahajan, S., Jain, A., Singh, M., Mohammed, S. (2019). Estimation of Scattering Loss Due to Sidewall Roughness in High Power Laser Diodes. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_146
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DOI: https://doi.org/10.1007/978-3-319-97604-4_146
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