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Next Generation Multilayer Graded Bandgap Solar Cells pp 41–73Cite as

Techniques Utilised in Materials Growth and Materials and Device Characterisation

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Abstract

Further to the semiconductor material and electronic properties discussed in Chap. 2, the evaluation of semiconductor materials can be examined for structural, morphological, compositional, optical and electronic properties to facilitate research towards optimisation. This chapter describes the physics and the basic functionality of X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, ultraviolet-visible (UV-Vis) spectroscopy and photoelectrochemical (PEC) cell measurement equipment. Current-voltage (I-V) and capacitance-voltage (C-V) techniques were utilised for the evaluation to facilitate research towards solar cell device performance in order to understand the factors affecting the performance of device materials.

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  1. Sheffield Hallam University, Sheffield, UK

    A. A. Ojo, W. M. Cranton & I. M. Dharmadasa

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Ojo, A.A., Cranton, W.M., Dharmadasa, I.M. (2019). Techniques Utilised in Materials Growth and Materials and Device Characterisation. In: Next Generation Multilayer Graded Bandgap Solar Cells. Springer, Cham. https://doi.org/10.1007/978-3-319-96667-0_3

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