Abstract
The dielectric functions and optical constants of various inorganic solar-cell materials, a total of 58 semiconductors, are summarized. The semiconductor materials described here include the group-IV (Si, Ge, and a-Si:H), III–V (GaAs, GaP, InP, InAs, and AlAs), II–VI (CdTe, CdS, ZnTe, ZnSe, and ZnS), I–III–VI2 (CuInSe2 and CuGaSe2) and I2–II–IV–VI4 (Cu2ZnSnSe4, Cu2ZnSnS4 and Cu2ZnGeSe4) semiconductors. For a-Si:H, Cu(In,Ga)Se2 and Cu2ZnSn(S,Se)4-based alloys, the variation of the optical constants with alloy composition is presented. This chapter also provides the optical properties of crystalline Si passivation layers (SiN, SiO2, Al2O3, and Ga2O3), which are necessary for optical simulation of solar cells. Furthermore, it is established in this chapter that the dielectric functions of numerous direct and indirect transition semiconductors can be parameterized almost perfectly by assuming several transition peaks calculated from the Tauc-Lorentz model. In this chapter, the parameterization results for all the 58 semiconductors are also summarized. For the passivation layers, the parameterization results obtained using the Sellmeier model are shown.
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Nakane, A. et al. (2018). Inorganic Semiconductors and Passivation Layers. In: Fujiwara, H., Collins, R. (eds) Spectroscopic Ellipsometry for Photovoltaics. Springer Series in Optical Sciences, vol 214. Springer, Cham. https://doi.org/10.1007/978-3-319-95138-6_8
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