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Phase-Change Memory and Optical Data Storage

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Springer Handbook of Glass

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Abstract

Phase-change memory is regarded as the most appealing of the nonvolatile memory technologies, with attractive properties including scalability, bit alterability, and fast write/erase and read performance. Over the past decade, the technology has experienced rapid growth. Well-known semiconductor manufacturers such as IBM, Infineon, Samsung, and Macronix have spared no effort in the push to commercialize this technology. At the same time, many novel phase-change materials have been developed, such as typical Ge-Sb-Te alloys, Zn-Sb-Te alloys, and ZnO-\(\mathrm{Sb_{2}Te_{3}}\) nanocomposite.

New techniques such as ultrafast calorimetry are continuously emerging to better understand the crystallization kinetics of supercooled liquids for phase-change materials. In addition, phase-change materials are ideal functional materials for use in integrated photonic memory, which provides a new paradigm in all-photonic memory.

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Authors and Affiliations

  1. Laboratory of Infrared Materials & Devices, Ningbo University, Ningbo, China

    Xiang Shen, Guoxiang Wang & Yegang Lv

  2. Dept. of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo City, China

    Yimin Chen

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  1. Xiang Shen
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Correspondence to Xiang Shen .

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  1. Rochester Precision Optics, LLC, West Henrietta, NY, USA

    J. David Musgraves

  2. Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA

    Juejun Hu

  3. UMR 6226 – Institut des Sciences Chimiques de Rennes, University of Rennes I, Rennes, France

    Laurent Calvez

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Shen, X., Chen, Y., Wang, G., Lv, Y. (2019). Phase-Change Memory and Optical Data Storage. In: Musgraves, J.D., Hu, J., Calvez, L. (eds) Springer Handbook of Glass. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-93728-1_44

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