Abstract
Memristors are promising building blocks for next-generation non-volatile memory, bio-inspired computing, and beyond. Currently, however, they are still suffering from several difficulties that prevent their mass production, including material compatibility and large array operation. In this chapter, we first survey research efforts on using silicon oxide as the switching material, and various ways to integrate selectors with silicon oxide based memristors for large array operation. A self-rectifying unipolar p-Si/SiO2/n-Si memristor is then introduced. The resistive switching is related to the formation and the rupture of a highly localized Si-rich conduction channel, as suggested by both electrical characterization and direct observation using transmission electron microscope (TEM). The self-rectifying behavior is attributed to a p-i-n diode at each junction at low resistance state, and negates the need for an external selector in a passive memristor array. Finally, we discuss three-dimensional crossbars of all-Si based memristors. The effectiveness of the built-in diodes in blocking both intra- and inter-layer sneak path current is confirmed with both simulation and experiments.
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References
Hickmott, T.W.: Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33(9), 2669 (1962)
Simmons, J.G., Verderber, R.R.: New conduction and reversible memory phenomena in thin insulating films. Proc. R. Soc. London. Series A. Math. Phys. Sci. 301(1464), 77–102 (1967)
Dearnaley, G., Stoneham, A.M., Morgan, D.V.: Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. 33(3), 1129 (1970)
Yao, J., Sun, Z., Zhong, L., Natelson, D., Tour, J.M.: Resistive switches and memories from silicon oxide. Nano Lett. 10(10), 4105–4110 (2010)
Mehonic, A., Kenyon, A.J.: Emulating the electrical activity of the neuron using a silicon oxide RRAM cell. Front. Neurosci. 10, 57 (2016)
Mehonic, A., et al.: Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory. J. Appl. Phys. 117(12), 124505 (2015)
Wang, Y., Chen, K., Qian, X., Fang, Z., Li, W., Xu, J.: The x dependent two kinds of resistive switching behaviors in SiOx films with different x component. Appl. Phys. Lett. 104(1), 012112 (2014)
Yao, J., Zhong, L., Natelson, D., Tour, J.M.: Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies. J. Am. Chem. Soc. 133(4), 941–948 (2011)
Yao, J., et al.: Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene (in eng). Nat. Commun. 3, 1101 (2012)
He, C., et al.: Tunable electroluminescence in planar graphene/SiO2 memristors. Adv. Mater. 25(39), 5593–5598 (2013)
Wang, Y., et al.: Effects of sidewall etching on electrical properties of SiOx resistive random access memory. Appl. Phys. Lett. 103(21), 213505 (2013)
Mehonic, A., et al.: Electrically tailored resistance switching in silicon oxide (in eng). Nanotechnology 23(45), 455201 (2012)
Chang, Y.-F., et al.: Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization. J. Appl. Phys. 116(4), 043708 (2014)
Mehonic, A., et al.: Nanoscale transformations in metastable, amorphous, silicon-rich silica. Adv. Mater. 28(34), 7486–7493 (2016)
Li, C., et al.: Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors. Nat. Commun. 8, 15666 (2017)
Yao, J., Zhong, L., Natelson, D., Tour, J.M.: In situ imaging of the conducting filament in a silicon oxide resistive switch (in eng). Sci. Rep. 2, 242 (2012)
Mehonic, A., et al.: Quantum conductance in silicon oxide resistive memory devices. Sci. Rep. 3, 2708 (2013)
Shim, W., Yao, J., Lieber, C.M.: Programmable resistive-switch nanowire transistor logic circuits. Nano Lett. 14(9), 5430–5436 (2014)
Wang, G., Lauchner, A.C., Lin, J., Natelson, D., Palem, K.V., Tour, J.M.: High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array. Adv. Mater. 25(34), 4789–4793 (2013)
Ji, L., et al.: Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography. Nano Lett. 14(2), 813–818 (2014)
Li, C., Jiang, H., Xia, Q.: Low voltage resistive switching devices based on chemically produced silicon oxide. Appl. Phys. Lett. 103(6), 062104 (2013)
Mark, P., Helfrich, W.: Space-charge-limited currents in organic crystals. J. Appl. Phys. 33(1), 205–215 (1962)
Sze, S.M., Ng, K.K.: Physics of Semiconductor Devices. Wiley, Hoboken (2006)
Yi-Chou, C., et al.: An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device. In: Electron Devices Meeting, 2003. IEDM ‘03 Technical Digest. IEEE International, pp. 37.4.1–37.4.4 (2003)
Zuo, Q., et al.: ZrO2-based memory cell with a self-rectifying effect for crossbar WORM memory application. IEEE Electron. Device Lett. 31(4), 344–346 (2010)
Zuo, Q., et al.: Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory. J. Appl. Phys. 106(7), 073724 (2009)
Dong, Y., Yu, G., McAlpine, M.C., Lu, W., Lieber, C.M.: Si/a-Si core/shell nanowires as nonvolatile crossbar switches. Nano Lett. 8(2), 386–391 (2008)
Jo, S.H., Lu, W.: CMOS compatible nanoscale nonvolatile resistance switching memory. Nano Lett. 8(2), 392–397 (2008)
Kim, K.-H., Hyun Jo, S., Gaba, S., Lu, W.: Nanoscale resistive memory with intrinsic diode characteristics and long endurance. Appl. Phys. Lett. 96(5), 053106 (2010)
Kim, H.-D., Yun, M., Kim, S.: Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices. J. Alloy. Compd. 651, 340–343 (2015)
Gao, S., et al.: Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Nanoscale 7(14), 6031–6038 (2015)
Tang, G.S., et al.: Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation. J. Appl. Phys. 113(24), 244502 (2013)
Dongyi, L., et al.: Investigations of conduction mechanisms of the self-rectifying n+Si-HfO2–Ni RRAM devices. IEEE Trans. Electron Devices 61(7), 2294–2301 (2014)
Tran, X.A., et al.: Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials. In: Electron Devices Meeting (IEDM), 2011 IEEE International, pp. 31.2.1–31.2.4 (2011)
Wang, M.J., Gao, S., Zeng, F., Song, C., Pan, F.: Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices. AIP Adv. 6(2), 025007 (2016)
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Li, C., Xia, Q. (2019). Three-Dimensional Crossbar Arrays of Self-rectifying Si/SiO2/Si Memristors. In: Chua, L., Sirakoulis, G., Adamatzky, A. (eds) Handbook of Memristor Networks. Springer, Cham. https://doi.org/10.1007/978-3-319-76375-0_28
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DOI: https://doi.org/10.1007/978-3-319-76375-0_28
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