Abstract
In this chapter, we present a description of the electronic and optical properties of mono- and few-layer InSe in the context of a tight-binding model. We find a marked change in the band gap on going from the bulk (band gap \(\sim \)1.3 eV) to the monolayer (band gap \(\sim \)2.8 eV) case, in agreement with experiment. We find that the principal interband optical transition is of a dominantly out-of-plane polarised character, with the oscillator strength increasing for thicker crystals, while the next-lowest energy transition couples strongly to in-plane polarised light, with an oscillator strength which is largely independent of the number of layers.
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- 1.
Reference [8] demonstrates the \(\mathbf {k\cdot p}\) expansion up to 8th order, necessary to obtain the anisotropy responsible for the expected Lifshitz transition, but as we neglect spin-orbit coupling, which changes the depth of the offset, we do not take that approach here.
- 2.
As we take the modulus of \(\mathbf {p}\) it is sufficient to choose either component of the twice-degenerate band.
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Magorrian, S.J. (2019). Tight-Binding Model. In: Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-030-25715-6_2
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