Skip to main content

T-CAD Simulation for the Designing of Detectors

  • Chapter
  • First Online:
Si Detectors and Characterization for HEP and Photon Science Experiment
  • 401 Accesses

Abstract

A simulation is the execution of a model, represented by a computer program that gives information about the system being investigated. The computer simulation approach of analyzing a model is opposed to the analytical approach, where the method of analyzing the system is purely theoretical. Simulation approach is more reliable and provides more flexibility and convenience.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 79.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 99.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. TMA TSUPREM-4 V. 1999.4. User manual, 1999.4

    Google Scholar 

  2. TMA MEDICI V.2000.4. Users manual, February 2000.4

    Google Scholar 

  3. Rafferty, C.S., et al.: Appl. Phys. Lett. 68(17), 2395 (1996)

    Article  ADS  Google Scholar 

  4. Huang, R.Y.S., et al.: J. Appl. Phys. 74(9), 5821 (1993)

    Article  ADS  Google Scholar 

  5. Watts, J.T.: Surface Mobility Modeling, presented at Computer-Aided Design of I.C. Fabrication Processes. Stanford University (Aug. 3, 1998)

    Google Scholar 

  6. Caughy, D.M., Thomas, R.E.: Proc. IEEE. 55, 2192 (1967)

    Article  Google Scholar 

  7. Varga, R.S.: Matrix Iterative Analysis. Prentice Hall, Englewood Cliffs, NJ (1962)

    MATH  Google Scholar 

  8. Selberher, S.: Analysis and Simulation of Semiconductor Devices. Springer, Wien (1984)

    Book  Google Scholar 

  9. Chatterji, S., Ranjan, K., Bhardwaj, A., Namrata, Srivastava, A.K., Shivpuri, R.K.: Annealing behaviour of boron implanted defects in Si detector: impact on breakdown performance. Eur. Phys. J. Appl. Phys. 17, 223 (2002)

    Article  ADS  Google Scholar 

  10. Chatterji, S., Bhardwaj, A., Ranjan, K., Namrata, A.K.S., Shivpuri, R.K.: Analysis of interstrip capacitance of Si microstrip detector using simulation approach. Solid State Electron. 47(9), 1491 (2003)

    Article  ADS  Google Scholar 

  11. Srivastava, A.K., Bhardwaj, A., Ranjan, K., Namrata, Chatterji, S., Shivpuri, R.K.: Two dimensional breakdown voltage analysis and optimal design of Si microstrip detector passivated by dielectric. Semicond. Sci. Technol. 17, 427 (2002)

    Article  ADS  Google Scholar 

  12. Synopsys Inc., TCAD software. http://www.synopsys.com/Tools/TCAD/DeviceSimulation/

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 2019 Springer Nature Switzerland AG

About this chapter

Check for updates. Verify currency and authenticity via CrossMark

Cite this chapter

Srivastava, A.K. (2019). T-CAD Simulation for the Designing of Detectors. In: Si Detectors and Characterization for HEP and Photon Science Experiment. Springer, Cham. https://doi.org/10.1007/978-3-030-19531-1_5

Download citation

Publish with us

Policies and ethics