Abstract
From a modeling point of view, the inclusion of adequate physical phenomena is mandatory when analyzing the behavior of new transistor architectures. In particular, the high electric field across the ultra-thin insulator in aggressively scaled transistors leads to the possibility for the charge carriers in the channel to tunnel through the gate oxide via various gate leakage mechanisms (GLMs). In this work, we study the impact of trap number on gate leakage using the GLM model, which is included in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator for Fully-Depleted Silicon-On-Insulator (FDSOI) field effect transistors (FETs). The GLM code described herein considers both direct and trap-assisted tunneling. This work shows that trap attributes and dynamics can modify the device electrostatic characteristics and even play a significant role in determining the extent of GLMs.
The research leading to these results has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 688101 SUPERAID7.
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Medina-Bailon, C. et al. (2019). Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator. In: Nikolov, G., Kolkovska, N., Georgiev, K. (eds) Numerical Methods and Applications. NMA 2018. Lecture Notes in Computer Science(), vol 11189. Springer, Cham. https://doi.org/10.1007/978-3-030-10692-8_30
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DOI: https://doi.org/10.1007/978-3-030-10692-8_30
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