Abstract
In this chapter, the non-classical “Three-gate SOI MESFET” is introduced and investigated by developing a three-dimensional analytical model for surface potential and threshold voltage. The model is derived by solving the 3-D Poisson’s equation in the channel of the device using appropriate boundary conditions.
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Amiri, I.S., Mohammadi, H., Hosseinghadiry, M. (2019). Three-Dimensional Analytical Model of the Non-Classical Three-Gate SOI MESFET. In: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer, Cham. https://doi.org/10.1007/978-3-030-04513-5_5
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DOI: https://doi.org/10.1007/978-3-030-04513-5_5
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