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General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET)

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Book cover Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

Abstract

This chapter states the physics and fundamental concepts related to different types of field effect transistors. The necessities and various strategies related to scaling are explained. A detailed description of the origin and impact of various short-channel effects associated with downscaling and their influence on the normal operation of MOS transistors are described. The different technical solutions presented to resolve the problems caused by short-channel effects are discussed. Finally, the structures and advantages of non-classical devices and their feasibility in the settling of the short-channel effects are described.

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Authors and Affiliations

  1. Computational Optics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    Iraj Sadegh Amiri

  2. Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    Iraj Sadegh Amiri

  3. Pasargad Higher Education Institute, Shiraz, Iran

    Hossein Mohammadi

  4. Allseas Engineering, DELFT, Zuid-Holland, The Netherlands

    Mahdiar Hosseinghadiry

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  1. Iraj Sadegh Amiri
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  2. Hossein Mohammadi
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  3. Mahdiar Hosseinghadiry
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Amiri, I.S., Mohammadi, H., Hosseinghadiry, M. (2019). General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET). In: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer, Cham. https://doi.org/10.1007/978-3-030-04513-5_2

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  • DOI: https://doi.org/10.1007/978-3-030-04513-5_2

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