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Group II–VI Semiconductors

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Abstract

II–VI semiconductors (compounds formed by group IIB metallic elements (Cd, Zn, and Hg) with group VI nonmetallic elements (O, S, Se, and Te)) have aroused intense interest in research and development. Because of its prominent optoelectronic properties for applications such as in thin-film photovoltaics, nanophotodetectors , and lasers, cadmium sulfide (CdS) has been in the spotlight. Due to its unique properties and applications in nanoscience and nanotechnology as phosphors, sensors, and optoelectronic devices, zinc oxide (ZnO) has drawn the attention as a strategic and safe technological material. Moreover, on account of their unique capability of behaving as both wide-bandgap (1.5–3.5 eV) and narrow-bandgap (0–1.5 eV) materials, II–VI compounds are utilized in applications such as photoconductors, ultrasonic transducers, and Hall effect devices. Mercury telluride (HgTe) has been placed in the foreground due to its very high Hall mobility and mobility ratio. In this chapter, a description of the processing techniques , properties, and applications of CdS, ZnO, and HgTe (and related ternary and quaternary compounds ), both as thin films and nanostructured forms, is detailed. Studies on the resulting materials morphologies and optoelectronic properties—from previous works by other authors as well as from the authors’ investigations—mainly focusing on CdS prepared by the chemical bath deposition (CBD) technique, are presented. The chapter is also intended to provide the readers with both seminal and recent bibliographical references on the topics.

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Authors and Affiliations

  1. Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Mexico

    Bindu Krishnan & Sadasivan Shaji

  2. Departamento de Investigación en Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales S/N, Col. Centro, C.P. 83000, Hermosillo, Sonora, Mexico

    M. C. Acosta-Enríquez, MA. E. Zayas & S. J. Castillo

  3. Departamento de Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales S/N, Col. Centro, C.P. 83000, Hermosillo, Sonora, Mexico

    E. B. Acosta-Enríquez

  4. Departamento de Ingeniería Industrial, Universidad de Sonora, Blvd. Luis Encinas y Rosales S/N, Col. Centro, C.P. 83000, Hermosillo, Sonora, Mexico

    R. Castillo-Ortega

  5. Nanotechnology Institute, CNR-NANOTEC, Via per Monteroni, 73100, Lecce, Italy

    Ilaria Elena Palamà, Eliana D’Amone & Stefania D’Amone

  6. Nanotechnology Institute, CNR-NANOTEC, University La Sapienza, P.zle Aldo Moro, Rome, Italy

    Barbara Cortese

  7. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Avenida Industria Metalúrgica No. 1062, Parque Industrial Saltillo-Ramos Arizpe, 25900, Ramos Arizpe, Coahuila, Mexico

    Martin I. Pech-Canul

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  1. Bindu Krishnan
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  2. Sadasivan Shaji
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  3. M. C. Acosta-Enríquez
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  4. E. B. Acosta-Enríquez
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  7. S. J. Castillo
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  8. Ilaria Elena Palamà
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  9. Eliana D’Amone
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  10. Martin I. Pech-Canul
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  11. Stefania D’Amone
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  12. Barbara Cortese
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Correspondence to Bindu Krishnan , M. C. Acosta-Enríquez or Barbara Cortese .

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  1. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional—Unidad Saltillo—Ingeniería Cerámica, Ramos Arizpe, Coahuila, Mexico

    Martin I. Pech-Canul

  2. Department of Physics, New Jersey Institute of Technology, Newark, NJ, USA

    Nuggehalli M. Ravindra

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Krishnan, B. et al. (2019). Group II–VI Semiconductors. In: Pech-Canul, M., Ravindra, N. (eds) Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-030-02171-9_7

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