Abstract
In the previous chapter, brief history of the development and fundamentals of 2D materials and vdW heterostructures and the very first methods to isolate them are provided. Graphene can be considered as the funding layer for the field of 2D materials. And we are able to continuously branch out from graphene to other kinds of 2D layers, which sometimes is so called “beyond graphene” 2D layers, and also the sciences and engineering behind them. A heterostructure made of 2D semiconducting materials is an important remark toward flexible and low-power optoelectronics in the future. Analogously, 2D TMDCs represent a new class of building blocks. By combining certain of them, interesting physical sciences and practical applications can be created out of our hands. However, current methods for making a vdW heterostructure may not always provide good material interfaces. This challenge inspired my graduate research on synthetic 2D layers and their heterostructures and discovery of their properties. This chapter covers some practical aspects of thin-film deposition and also methods used for depositing 2D TMDC domains and films. The transport mechanism for 2D material devices is dominated by a few scattering events, which a lot of time are related to the interface of 2D materials and their substrates. This chapter, therefore, provides all necessary knowledges that are not all included in the later chapter which focused on the properties, devices of synthetic 2D layers, 2D/2D vdW heterostructures, and 2D/3D heterostructures.
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Lin, YC. (2018). Synthesis and Properties of 2D Semiconductors. In: Properties of Synthetic Two-Dimensional Materials and Heterostructures. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-030-00332-6_2
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DOI: https://doi.org/10.1007/978-3-030-00332-6_2
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