Abstract
Low thermal-budget processing of Si can produce point-defect concentrations that depend on time, temperature and ambient in ways that are unlike observations from high temperature/long time anneals. Following ion implantation, anneals in oxidizing ambients may produce point-defect supersaturations that are not significant compared to levels produced by dissolving point-defect clusters or extended dislocations. A reverse oxidation-enhanced diffusion (OED) effect is observed for 750°C anneals of B an As-implanted Si. Other sources of point-defects in low thermal-budget processes include dissolving precipitates and metal silicide reactions which can assist in eliminating process-induced defects.
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Fair, R.B. (1988). Oxidation-Induced Defects and Effects in Silicon During Low Thermal-Budget Processing. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_51
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_51
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