Mos Tunneling Rate and Interface State Capture Cross-Section

Abstract

Considering electron tunneling as a recombination proce s, we calculate capture cross-section, σ _n, and transition rate, τ _T ⁻¹ = τ _o ⁻¹ exp(-2η _od), for electron tunneling from an interface trap through the oxide (d ≈ 30 Å) to the metal by employing Bardeen’s matrix element on a simple one-dimensional model of the MOS structure. Calcufatgd magnitudes and dependences on trap energy of dynamic parameters, τ _o ⁻¹, σ _n, η _o agree reasonably well with measured data. Three-dimensional effects such as band tails are discussed qualitatively.