Abstract
The metal-semiconductor work function difference Ø ms in the Al—SiO2—Si system has been measured using capacitance-voltage (C-V) measurements, and it was found to be orientation dependent, with the (100) orientation having a Ø ms larger than that of (111) by — 0.250 V. This result is in agreement with previous studies which showed that Ø ms is both orientation and processing dependent. These observations are interpreted in terms of the contribution of dipole moments resulting from partial charge transfer in interface bonds to the Ø ms . Such charge transfer takes place in bonds at the Si—SiO2 and gate—SiO2 interfaces and in their vicinity. The contribution of these dipole moments to the measured Ø ms has been calculated from first principles, and the results predict the orientation dependence of Ø ms , and provide a physical model for further investigating its processing dependence. Measurements and process modeling of charge components in metal-oxide-semiconductor (MOS) devices will be discussed.
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Massoud, H.Z., Plummer, J.D. (1988). A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_28
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_28
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