Abstract
The bonding of Si atoms at the SiO2/Si interface is determined via high-resolution core level spectroscopy with synchrotron radiation. For oxides grown in pure O2, the SiO2/Si interface is found to contain Si atoms in intermediate oxidation states with a density of 1.5 ± 0.5 × 1015 cm−2. From the density and distribution of intermediate oxidation states, models of the interface structure are obtained. The interface is not abrupt, as evidenced by the non-ideal distribution of intermediate oxidation states and their high density (about 2 monolayers of Si). The finite width of the interface is explained by the bond density mismatch between SiO2 and Si. Annealing in H2 is found to influence the electrical parameters by removing the Pb centers that pin the Fermi level. The distribution of intermediate oxidation states is not affected.
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Himpsel, F.J., McFeely, F.R., Taleb-Ibrahimi, A., Yarmoff, J.A., Hollinger, G. (1988). Microscopic Structure Of The SiO2/Si Interface. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_24
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_24
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