Abstract
Electrical properties of anodic SiO2 grown at room temperature and annealed at 450℃ have been shown to closely approach those of thermal SiO2. Midgap interface state densities in the low-1010 cm−2.eV−1. oxide surface charge at flatband in the low-1010 cm−2. average breakdown fields in excess of 10 MV/cm. and do resistivities above 1016 Ω.cm at 1MV/cm have been measured. The oxide surface charge at flatband is thickness dependent. The dependence of electrical and structural properties on various annealing conditions will be discussed.
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© 1988 Springer Science+Business Media New York
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Sayyah, K. (1988). Anodic SiO2 for Low Temperature Gate Dielectrics. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_14
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_14
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