Abstract
Thin and narrow aluminum alloy metallizations represent the most important interconnects used in integrated circuit technology at the microchip level. Recently, stress induced voiding and notching of these films has become a serious reliability concern1–3. Moreover, since there is a steady trend towards larger packaging densities, the industry standard for the line width approaching now to the submicron scale, the failure risk of the interconnects, inversely proportional to the cube of the line width in case of grain boundary cavitation3, is likely to increase significantly.
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References
K. Hinode, N. Owada, T. Nishida, and K. Mukai, J. Vac. Sci. Technol. B5:518 (1987).
J. W. McPherson and CF. Dunn, J. Vac. Sci. Technol. B5:1321 (1987).
Che-Yu Li, R. D. Black, and W. R. LaFontaine, Appl. Phys. Lett. 53:31 (1988).
P. A. Flinn, D. S. Gardner and W. D. Nix, IEEE Trans. ED-34:689 (1987).
M. F. Doerner, D. S. Gardner and W. D. Nix, J. Mater. Res. 1:845 (1986).
T. J. Louzon and T. H. Spencer, Sol. St. Technol. 7:25 (1975).
C. J. Shute, J. B. Cohen, and D. A. Jeannotte, Proc. MRS Conf., Boston, Nov. 28–Dec. 3, 1988.
M. A. Korhonen and Christine A. Paszkiet, Scripta Met. 23:1449 (1989).
Christine A. Paszkiet, M. A. Korhonen and Che-Yu Li, Proc. MRS Conf., San Francisco, Apr. 16–20, 1990.
M. A. Korhonen, Christine A. Paszkiet, R. D. Black, and Che-Yu Li, to appear in Scripta Metallurgica.
A. Tezaki, T. Mineta, H. Egawa, and T. Noguchi, Proc. Conf. IEEE/IRPS, 1990, p. 221.
P. A. Flinn and C. Cheng, J. Appl. Phys. 67:2927 (1990).
M. A. Korhonen, R. D. Black, and Che-Yu Li, submitted to J. Appl. Phys.
M. A. Korhonen, V. K. Lindroos and L. S. Suominen, Adv. X-ray Anal. 32:407 (1989).
K. Simomaa, V. Kelha, T. Tuomi, M. A. Korhonen, and L. S. Suominen, Proc. Conf. Image Detection and Quality, Jul. 16–18, 1988, Paris, 203.
B. D. Cullity, “Elements of X-ray Diffraction”, Addison-Wesley, first ed., 1956.
L. C. Noyan and J. B. Cohen, “Residual Stress: Measurement by Diffraction and Interpretation”, Springer-Verlag, 1987.
A. Reuss, Z. Angew. Math. Mech. 9:49 (1929).
W. Voigt, “Lehrbuch der Kristallphysik”, Teubner, Leipzig, 1928.
H. Neerfeld, Mitt. Kaiser Wilhelm Inst, für Eisenforschg. 24:61 (1942).
A. Segmueller and M. Murakami, Treatises on Materials Science and Technology 27:143 (1988).
K. Toenshoff, E. Brinksmeier, and H. H. Noelke, Z. Metallknde 72:349 (1981).
C. O. Ruud and P. C. Chen, Exp. Mech. 25:245 (1985).
J. D. Eshelby, Proc. Roy. Soc. A 241:561 (1957).
S. Timoshenko, “Strength of Materials”, Van Nostrand, 1956, 210.
Anne I. Sauter and W. D. Nix, Proc. MRS Conf., San Francisco, Apr. 16-20, 1990.
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Korhonen, M.A., Suominen, L.S., Li, CY. (1991). X-Ray Stress Studies of Aluminum Metallizations on Silicon Substrate. In: Ruud, C.O., Bussière, J.F., Green, R.E. (eds) Nondestructive Characterization of Materials IV. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0670-0_3
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