Abstract
Thin film characterization by X-Ray methods is often difficult because of the problems of preferred crystal orientations and residual stresses. For example, it is well known that coatings made by physical vapor deposition are very strongly textured so that measurements of residual stress by classical X-Ray methods are very inaccurate. Furthermore, the characterization of epitaxial thin layers of semi-conductors requires very accurate determination of crystal orientations and interfacial misfits.
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Fillit, R.Y., Perry, A.J., Dodelet, J.P., Perrier, G., Philippe, R. (1991). Accurate Structural Characterization of ZrN Coatings and Epitaxial Layers by X-Ray Diffraction Using the DOSOPHATEX System. In: Ruud, C.O., Bussière, J.F., Green, R.E. (eds) Nondestructive Characterization of Materials IV. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0670-0_1
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DOI: https://doi.org/10.1007/978-1-4899-0670-0_1
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