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Impurities in Semiconductors

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Book cover Low-Dimensional Structures in Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 281))

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Abstract

A brief outline is presented on recent developments in defect characterization and identification in semiconductors which have been made possible by the application of methods other than junction space charge techniques (JSCT). Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photothermal ionization spectroscopy is discussed in more detail. Si/Ge is taken as an example to show how JSCT can be used for the study of low-dimensional structures.

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Author information

Authors and Affiliations

  1. Department of Solid State Physics, University of Lund, P.O.Box 118, S-221 00, Lund, Sweden

    H. G. Grimmeiss, M. Kleverman, J. Olajos, P. Omling & V. Nagesh

Authors
  1. H. G. Grimmeiss
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  2. M. Kleverman
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  3. J. Olajos
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  4. P. Omling
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  5. V. Nagesh
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Editor information

Editors and Affiliations

  1. University of Manchester Institute of Science and Technology, Manchester, UK

    A. R. Peaker

  2. University of Lund, Lund, Sweden

    H. G. Grimmeiss

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© 1991 Springer Science+Business Media New York

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Grimmeiss, H.G., Kleverman, M., Olajos, J., Omling, P., Nagesh, V. (1991). Impurities in Semiconductors. In: Peaker, A.R., Grimmeiss, H.G. (eds) Low-Dimensional Structures in Semiconductors. NATO ASI Series, vol 281. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0623-6_2

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  • DOI: https://doi.org/10.1007/978-1-4899-0623-6_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-0625-0

  • Online ISBN: 978-1-4899-0623-6

  • eBook Packages: Springer Book Archive

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