Abstract
The purpose of this chapter is to provide a brief introduction to the main physical phenomena occurring in semiconductor devices. Because of the dominant position of silicon as a semiconducting material in present-day devices, most of the phenomena discussed here relate to effects occurring in silicon devices. However, attention will also be paid to other materials, such as III–V compounds, which are especially important for semiconductor optical devices.
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References
R. A. Smith, Semiconductors, Cambridge University Press, Cambridge, England (1961).
L. B. Valdes, The Physical Theory of Transistors, McGraw-Hill Book Company, New York (1961).
E. Spenke, Elektronische Halbleiter, 2. Auflage, Springer-Verlag, Berlin (1965).
J. Lindmayer and C. Y. Wrigley, Fundamentals of Semiconductor Devices, Van Nostrand, Princeton (1965).
A. Many, Y. Goldstein, and N. B. Grover, Semiconductor Surfaces, North-Holland Publishing Company, Amsterdam (1971).
A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley and Sons, New York (1967).
S. M. Sze, Physics of Semiconductor Devices, 2nd edn., John Wiley and Sons, New York (1981).
H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs, Academic Press, New York (1977).
H. C. Casey and M. B. Panish, Heîerostructure Lasers, Academic Press, New York (1978).
C. Husum, ed., Handbook on Semiconductors, Vol. 4, Device Physics, North-Holland Publishing Company, Amsterdam (1981).
E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley and Sons, New York (1982).
S. Pantelides, Rev. Mod. Phys. 50, 797 (1978).
M. Balkanski, A. Aziza, and E. Amzallag, Phys. Status Solidi 31, 323 (1969).
J. W. Slotboom and H. C. de Graaflf, Solid-State Electron. 19, 857 (1976).
H. L. Stornier, A. Chang, D. C. Tsui, J. C. M. Hwang, A. C. Gossard, and W. Wiegman, Phys. Rev. Lett. 50, 1953 (1983).
G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. 50, 5484 (1979).
P. A. Martin, B. G. Streetman, and K. Hess, J. Appl. Phys. 52, 7409 (1981).
A. Messiah, Quantum Mechanics, Chapter VI, North-Holland Publishing Company, Amsterdam (1958).
K. K. Thornber, J. Appl. Phys. 52, 280 (1981).
W. Shockley, Solid-State Electron. 2, 35 (1961).
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Pals, J.A. (1986). Basic Properties in Semiconductor Devices. In: Butcher, P.N., March, N.H., Tosi, M.P. (eds) Crystalline Semiconducting Materials and Devices. Physics of Solids and Liquids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9900-2_13
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DOI: https://doi.org/10.1007/978-1-4757-9900-2_13
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